CSD13302W دیتاشیت

CSD13302W

مشخصات دیتاشیت

نام دیتاشیت CSD13302W
حجم فایل 82.427 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت CSD13302W

دانلود دیتاشیت

سایر مستندات

CSD13302W(T) Datasheet 12 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD13302W
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Total Gate Charge (Qg@Vgs): 7.8nC@4.5V
  • Drain Source Voltage (Vdss): 12V
  • Input Capacitance (Ciss@Vds): 862pF@6V
  • Continuous Drain Current (Id): 1.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 17.1mΩ@1A,4.5V
  • Package: BGA-4
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 1.8W (Ta)
  • Drain to Source Voltage (Vdss): 12V
  • Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
  • Vgs (Max): ±10V
  • FET Type: N-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 862pF @ 6V
  • Packaging: Cut Tape (CT)
  • Package / Case: 4-UFBGA, DSBGA
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
  • Supplier Device Package: 4-DSBGA
  • Mounting Type: Surface Mount
  • Base Part Number: CSD133
  • detail: N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA

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