CSD13302W

CSD13302W

CSD13302W

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مشخصات فنی:
Manufacturer Texas Instruments
Package 4-UFBGA, DSBGA
Datasheet CSD13302W(T) Datasheet
Description N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet Texas Instruments CSD13302W
  • Operating Temperature -55°C~+150°C@(Tj)
  • Total Gate Charge (Qg@Vgs) 7.8nC@4.5V
  • Drain Source Voltage (Vdss) 12V
  • Input Capacitance (Ciss@Vds) 862pF@6V
  • Continuous Drain Current (Id) 1.6A
  • Gate Threshold Voltage (Vgs(th)@Id) 1.3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 17.1mΩ@1A,4.5V
  • Package BGA-4
  • Manufacturer Texas Instruments
  • Power Dissipation (Max) 1.8W (Ta)
  • Drain to Source Voltage (Vdss) 12V
  • Rds On (Max) @ Id, Vgs 17.1mOhm @ 1A, 4.5V
  • Vgs (Max) ±10V
  • FET Type N-Channel
  • Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
  • Technology MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
  • FET Feature -
  • Input Capacitance (Ciss) (Max) @ Vds 862pF @ 6V
  • Packaging Cut Tape (CT)
  • Package / Case 4-UFBGA, DSBGA
  • Part Status Active
  • Series NexFET™
  • Vgs(th) (Max) @ Id 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V
  • Supplier Device Package 4-DSBGA
  • Mounting Type Surface Mount
  • Base Part Number CSD133
  • detail N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA

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