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STB9NK50ZT4 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STB9NK50ZT4 |
|---|---|
| حجم فایل | 75.555 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 13 |
دانلود دیتاشیت STB9NK50ZT4 |
دانلود دیتاشیت |
|---|
سایر مستندات
ST(B,P)9NK50Z(FP,-1) 13 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STB9NK50ZT4
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 110W
- Total Gate Charge (Qg@Vgs): 32nC@10V
- Drain Source Voltage (Vdss): 500V
- Input Capacitance (Ciss@Vds): 910pF@25V
- Continuous Drain Current (Id): 7.2A
- Gate Threshold Voltage (Vgs(th)@Id): 3.75V@100uA
- Reverse Transfer Capacitance (Crss@Vds): 30pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 720mΩ@10V,3.6A
- Package: D2PAK
- Manufacturer: STMicroelectronics
- Series: SuperMESH™
- Packaging: Cut Tape (CT)
- Part Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: STB9N
- detail: N-Channel 500V 7.2A (Tc) 110W (Tc) Surface Mount D2PAK