STB9NK50ZT4
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| Manufacturer | STMicroelectronics |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | ST(B,P)9NK50Z(FP,-1) |
| Description | N-Channel 500V 7.2A (Tc) 110W (Tc) Surface Mount D2PAK |
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مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STB9NK50ZT4
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 110W
- Total Gate Charge (Qg@Vgs) 32nC@10V
- Drain Source Voltage (Vdss) 500V
- Input Capacitance (Ciss@Vds) 910pF@25V
- Continuous Drain Current (Id) 7.2A
- Gate Threshold Voltage (Vgs(th)@Id) 3.75V@100uA
- Reverse Transfer Capacitance (Crss@Vds) 30pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 720mΩ@10V,3.6A
- Package D2PAK
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Cut Tape (CT)
- Part Status Not For New Designs
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 7.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 850mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
- FET Feature -
- Power Dissipation (Max) 110W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D2PAK
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number STB9N
- detail N-Channel 500V 7.2A (Tc) 110W (Tc) Surface Mount D2PAK
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