CSD25213W10 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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CSD25213W10
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حجم فایل
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87.087
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Texas Instruments CSD25213W10
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
1W
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Total Gate Charge (Qg@Vgs):
2.2nC@4.5V
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Drain Source Voltage (Vdss):
20V
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Input Capacitance (Ciss@Vds):
368pF@10V
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Continuous Drain Current (Id):
1.6A
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Gate Threshold Voltage (Vgs(th)@Id):
850mV@250uA
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Reverse Transfer Capacitance (Crss@Vds):
7.8pF@10V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
39mΩ@4.5V,1A
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Package:
BGA-4
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Manufacturer:
Texas Instruments
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Power Dissipation (Max):
1W (Ta)
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Drain to Source Voltage (Vdss):
20V
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Rds On (Max) @ Id, Vgs:
47mOhm @ 1A, 4.5V
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Vgs (Max):
-6V
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FET Type:
P-Channel
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Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
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Technology:
MOSFET (Metal Oxide)
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Current - Continuous Drain (Id) @ 25°C:
1.6A (Ta)
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FET Feature:
-
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Input Capacitance (Ciss) (Max) @ Vds:
478pF @ 10V
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Packaging:
Cut Tape (CT)
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Package / Case:
4-UFBGA, DSBGA
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Part Status:
Active
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Series:
NexFET™
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Vgs(th) (Max) @ Id:
1.1V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
2.9nC @ 4.5V
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Supplier Device Package:
4-DSBGA (1x1)
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Mounting Type:
Surface Mount
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Base Part Number:
CSD2521
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detail:
P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
