CSD25213W10
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| Manufacturer | Texas Instruments |
| Package | 4-UFBGA, DSBGA |
| Datasheet | CSD25213W10 |
| Description | P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1) |
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مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD25213W10
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1W
- Total Gate Charge (Qg@Vgs) 2.2nC@4.5V
- Drain Source Voltage (Vdss) 20V
- Input Capacitance (Ciss@Vds) 368pF@10V
- Continuous Drain Current (Id) 1.6A
- Gate Threshold Voltage (Vgs(th)@Id) 850mV@250uA
- Reverse Transfer Capacitance (Crss@Vds) 7.8pF@10V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 39mΩ@4.5V,1A
- Package BGA-4
- Manufacturer Texas Instruments
- Power Dissipation (Max) 1W (Ta)
- Drain to Source Voltage (Vdss) 20V
- Rds On (Max) @ Id, Vgs 47mOhm @ 1A, 4.5V
- Vgs (Max) -6V
- FET Type P-Channel
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Technology MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
- FET Feature -
- Input Capacitance (Ciss) (Max) @ Vds 478pF @ 10V
- Packaging Cut Tape (CT)
- Package / Case 4-UFBGA, DSBGA
- Part Status Active
- Series NexFET™
- Vgs(th) (Max) @ Id 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 4.5V
- Supplier Device Package 4-DSBGA (1x1)
- Mounting Type Surface Mount
- Base Part Number CSD2521
- detail P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
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