دیتاشیت STF8NM60ND

STx8NM60N

مشخصات دیتاشیت

نام دیتاشیت STx8NM60N
حجم فایل 725.08 کیلوبایت
نوع فایل pdf
تعداد صفحات 19

دانلود دیتاشیت STx8NM60N

STx8NM60N Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STF8NM60ND
  • Power Dissipation (Pd): 25W
  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 7A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 700mΩ@10V,3.5A
  • Package: TO-220F-3
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: STF8N
  • detail: N-Channel 600V 7A (Tc) 25W (Tc) Through Hole TO-220FP

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