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- دیتاشیت STF8NM60ND
دیتاشیت STF8NM60ND
مشخصات دیتاشیت
| نام دیتاشیت | STF8NM60ND |
|---|---|
| حجم فایل | 75.481 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 17 |
STF8NM60ND |
دانلود دیتاشیت |
|---|
سایر مستندات
STx8NM60N 19 pages
STF8NM60ND 2 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STF8NM60ND
- Power Dissipation (Pd): 25W
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 7A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 700mΩ@10V,3.5A
- Package: TO-220F-3
- Manufacturer: STMicroelectronics
- Series: MDmesh™ II
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
- Base Part Number: STF8N
- detail: N-Channel 600V 7A (Tc) 25W (Tc) Through Hole TO-220FP