STF8NM60ND
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 Full Pack |
| Datasheet | STx8NM60N |
| Description | N-Channel 600V 7A (Tc) 25W (Tc) Through Hole TO-220FP |
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تغییرات قیمت
مشخصات STF8NM60ND
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STF8NM60ND
- Power Dissipation (Pd) 25W
- Drain Source Voltage (Vdss) 600V
- Continuous Drain Current (Id) 7A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 700mΩ@10V,3.5A
- Package TO-220F-3
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 650mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 560pF @ 50V
- FET Feature -
- Power Dissipation (Max) 25W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220FP
- Package / Case TO-220-3 Full Pack
- Base Part Number STF8N
- detail N-Channel 600V 7A (Tc) 25W (Tc) Through Hole TO-220FP
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