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- دیتاشیت STFW45N65M5
STFW45N65M5 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STFW45N65M5 |
|---|---|
| حجم فایل | 68.569 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 18 |
دانلود دیتاشیت STFW45N65M5 |
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سایر مستندات
STW(A)45N65M5, STFW45N65M5 18 pages
STFW45N65M5 2 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STFW45N65M5
- Operating Temperature: +150°C@(Tj)
- Power Dissipation (Pd): 57W
- Total Gate Charge (Qg@Vgs): 82nC@10V
- Drain Source Voltage (Vdss): 650V
- Input Capacitance (Ciss@Vds): 3.47nF@100V
- Continuous Drain Current (Id): 35A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 7pF@100V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 67mΩ@10V,17.5A
- Package: TO-3PF
- Manufacturer: STMicroelectronics
- Series: MDmesh™ V
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: ISOWATT-218FX
- Package / Case: ISOWATT218FX
- Base Part Number: STFW
- detail: N-Channel 650V 35A (Tc) 57W (Tc) Through Hole ISOWATT-218FX