STFW45N65M5
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| Manufacturer | STMicroelectronics |
| Package | ISOWATT218FX |
| Datasheet | STW(A)45N65M5, STFW45N65M5 |
| Description | N-Channel 650V 35A (Tc) 57W (Tc) Through Hole ISOWATT-218FX |
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مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STFW45N65M5
- Operating Temperature +150°C@(Tj)
- Power Dissipation (Pd) 57W
- Total Gate Charge (Qg@Vgs) 82nC@10V
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) 3.47nF@100V
- Continuous Drain Current (Id) 35A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 7pF@100V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 67mΩ@10V,17.5A
- Package TO-3PF
- Manufacturer STMicroelectronics
- Series MDmesh™ V
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 78mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 3470pF @ 100V
- FET Feature -
- Power Dissipation (Max) 57W (Tc)
- Mounting Type Through Hole
- Supplier Device Package ISOWATT-218FX
- Package / Case ISOWATT218FX
- Base Part Number STFW
- detail N-Channel 650V 35A (Tc) 57W (Tc) Through Hole ISOWATT-218FX
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