TPS1120DR دیتاشیت

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مشاهده دیتاشیت TPS1120DR	دانلود دیتاشیت

RoHS: true
Type: 2 P-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments TPS1120DR
Operating Temperature: -40°C~+150°C@(Tj)
Power Dissipation (Pd): 840mW
Total Gate Charge (Qg@Vgs): 5.45nC@10V
Drain Source Voltage (Vdss): 15V
Continuous Drain Current (Id): 1.17A
Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@10V,1.5A
Package: SOP-8
Manufacturer: Texas Instruments
Base Part Number: TPS112
Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 1.17A
Power - Max: 840mW
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 15V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Part Status: Active
Packaging: Cut Tape (CT)
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
detail: Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC