TPS1120DR

TPS1120DR

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مشخصات فنی:
Manufacturer Texas Instruments
Package 8-SOIC (0.154", 3.90mm Width)
Datasheet TPS1120, TPS1120Y
Description Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

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مشخصات

  • RoHS true
  • Type 2 P-Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet Texas Instruments TPS1120DR
  • Operating Temperature -40°C~+150°C@(Tj)
  • Power Dissipation (Pd) 840mW
  • Total Gate Charge (Qg@Vgs) 5.45nC@10V
  • Drain Source Voltage (Vdss) 15V
  • Continuous Drain Current (Id) 1.17A
  • Gate Threshold Voltage (Vgs(th)@Id) 1.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 180mΩ@10V,1.5A
  • Package SOP-8
  • Manufacturer Texas Instruments
  • Base Part Number TPS112
  • Gate Charge (Qg) (Max) @ Vgs 5.45nC @ 10V
  • Package / Case 8-SOIC (0.154", 3.90mm Width)
  • Series -
  • Input Capacitance (Ciss) (Max) @ Vds -
  • Vgs(th) (Max) @ Id 1.5V @ 250µA
  • Current - Continuous Drain (Id) @ 25°C 1.17A
  • Power - Max 840mW
  • Supplier Device Package 8-SOIC
  • Mounting Type Surface Mount
  • Drain to Source Voltage (Vdss) 15V
  • Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 10V
  • Part Status Active
  • Packaging Cut Tape (CT)
  • FET Feature Logic Level Gate
  • FET Type 2 P-Channel (Dual)
  • detail Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

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