MAT12AHZ دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MAT12AHZ
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حجم فایل
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73.861
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Analog Devices MAT12AHZ
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Transistor Type:
2 NPN(Bipolar Transistors)
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
20mA
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Power Dissipation (Pd):
-
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Transition Frequency (fT):
200MHz
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DC Current Gain (hFE@Ic,Vce):
605@1mA
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Collector Cut-Off Current (Icbo):
25pA
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Collector-Emitter Breakdown Voltage (Vceo):
40V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
50mV@1mA,100uA
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Package:
TO-78-6
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Manufacturer:
Analog Devices
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Series:
-
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Packaging:
Box
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Part Status:
Active
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Current - Collector (Ic) (Max):
20mA
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Voltage - Collector Emitter Breakdown (Max):
40V
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Vce Saturation (Max) @ Ib, Ic:
200mV @ 100µA, 1mA
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Current - Collector Cutoff (Max):
500pA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
-
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Power - Max:
-
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Frequency - Transition:
200MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-78-6 Metal Can
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Supplier Device Package:
TO-78-6
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detail:
Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 40V 20mA 200MHz Through Hole TO-78-6
