MAT12AHZ
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| Manufacturer | Analog Devices |
| Package | TO-78-6 Metal Can |
| Datasheet | MAT12 |
| Description | Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 40V 20mA 200MHz Through Hole TO-78-6 |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Analog Devices MAT12AHZ
- Transistor Type 2 NPN(Bipolar Transistors)
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 20mA
- Power Dissipation (Pd) -
- Transition Frequency (fT) 200MHz
- DC Current Gain (hFE@Ic,Vce) 605@1mA
- Collector Cut-Off Current (Icbo) 25pA
- Collector-Emitter Breakdown Voltage (Vceo) 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 50mV@1mA,100uA
- Package TO-78-6
- Manufacturer Analog Devices
- Series -
- Packaging Box
- Part Status Active
- Current - Collector (Ic) (Max) 20mA
- Voltage - Collector Emitter Breakdown (Max) 40V
- Vce Saturation (Max) @ Ib, Ic 200mV @ 100µA, 1mA
- Current - Collector Cutoff (Max) 500pA
- DC Current Gain (hFE) (Min) @ Ic, Vce -
- Power - Max -
- Frequency - Transition 200MHz
- Mounting Type Through Hole
- Package / Case TO-78-6 Metal Can
- Supplier Device Package TO-78-6
- detail Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 40V 20mA 200MHz Through Hole TO-78-6