دیتاشیت LND150N3-G-P003

LND150

مشخصات دیتاشیت

نام دیتاشیت LND150
حجم فایل 609.992 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت LND150

LND150 Datasheet

مشخصات

  • Manufacturer: Microchip Technology
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
  • Vgs(th) (Max) @ Id: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • detail: N-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3