دیتاشیت LND150N3-G-P003
مشخصات دیتاشیت
نام دیتاشیت |
LND150
|
حجم فایل |
609.992
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
7
|
مشخصات
-
Manufacturer:
Microchip Technology
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
500V
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Current - Continuous Drain (Id) @ 25°C:
30mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On):
0V
-
Rds On (Max) @ Id, Vgs:
1000Ohm @ 500µA, 0V
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Vgs(th) (Max) @ Id:
-
-
Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
10pF @ 25V
-
FET Feature:
Depletion Mode
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Power Dissipation (Max):
740mW (Ta)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-92-3
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
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detail:
N-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3