دیتاشیت VN10KN3-G-P002

VN10K

مشخصات دیتاشیت

نام دیتاشیت VN10K
حجم فایل 641.262 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

دانلود دیتاشیت VN10K

VN10K Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Microchip Tech VN10KN3-G-P002
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1W
  • Input Capacitance (Ciss@Vds): 60pF@25V
  • Continuous Drain Current (Id): 310mA
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@500mA,10V
  • Package: TO-92-3
  • Manufacturer: Microchip Tech
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • detail: N-Channel 60V 310mA (Tj) 1W (Tc) Through Hole TO-92-3

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