VN10KN3-G-P002
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| Manufacturer | Microchip Tech |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | VN10K |
| Description | N-Channel 60V 310mA (Tj) 1W (Tc) Through Hole TO-92-3 |
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مشخصات VN10KN3-G-P002
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Microchip Tech VN10KN3-G-P002
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1W
- Input Capacitance (Ciss@Vds) 60pF@25V
- Continuous Drain Current (Id) 310mA
- Gate Threshold Voltage (Vgs(th)@Id) 2.5V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 5Ω@500mA,10V
- Package TO-92-3
- Manufacturer Microchip Tech
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 310mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
- FET Feature -
- Power Dissipation (Max) 1W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- detail N-Channel 60V 310mA (Tj) 1W (Tc) Through Hole TO-92-3
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