دیتاشیت 2N7002-G

2N7002

مشخصات دیتاشیت

نام دیتاشیت 2N7002
حجم فایل 904.509 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

دانلود دیتاشیت 2N7002

2N7002 Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. 2N7002-G
  • Power Dissipation (Pd): 225mW
  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 115mA
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@10V,500mA
  • Package: SOT-23
  • Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23 (TO-236AB)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • detail: N-Channel 60V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)

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