DN2535N5-G 数据手册
其他文档
DN2535 6 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Microchip Tech DN2535N5-G
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 15W
- Drain Source Voltage (Vdss): 350V
- Input Capacitance (Ciss@Vds): 300pF@25V
- Continuous Drain Current (Id): 500mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 25Ω@120mA,0V
- Package: TO-220
- Manufacturer: Microchip Tech
- Series: -
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
- Vgs(th) (Max) @ Id: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 15W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- detail: N-Channel 350V 500mA (Tj) 15W (Tc) Through Hole TO-220-3