VP3203N3-G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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VP3203N3-G
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حجم فایل
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112.057
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Microchip Tech VP3203N3-G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
740mW
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
300pF@25V
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Continuous Drain Current (Id):
650mA
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Gate Threshold Voltage (Vgs(th)@Id):
3.5V@10mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
600mΩ@3A,10V
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Package:
TO-92
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Manufacturer:
Microchip Tech
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Series:
-
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Packaging:
Bulk
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
650mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
600mOhm @ 3A, 10V
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Vgs(th) (Max) @ Id:
3.5V @ 10mA
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
740mW (Ta)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-92-3
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
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detail:
P-Channel 30V 650mA (Tj) 740mW (Ta) Through Hole TO-92-3
