VP3203N3-G
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| Manufacturer | Microchip Tech |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Datasheet | VP3203 |
| Description | P-Channel 30V 650mA (Tj) 740mW (Ta) Through Hole TO-92-3 |
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مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Microchip Tech VP3203N3-G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 740mW
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 300pF@25V
- Continuous Drain Current (Id) 650mA
- Gate Threshold Voltage (Vgs(th)@Id) 3.5V@10mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 600mΩ@3A,10V
- Package TO-92
- Manufacturer Microchip Tech
- Series -
- Packaging Bulk
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 650mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id 3.5V @ 10mA
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
- FET Feature -
- Power Dissipation (Max) 740mW (Ta)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- detail P-Channel 30V 650mA (Tj) 740mW (Ta) Through Hole TO-92-3
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