CSD16323Q3C دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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CSD16323Q3C
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حجم فایل
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228.75
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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FET Feature:
-
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FET Type:
N-Channel
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Drive Voltage (Max Rds On, Min Rds On):
3V, 8V
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Package / Case:
8-PowerTDFN
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Rds On (Max) @ Id, Vgs:
4.5mOhm @ 24A, 8V
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Base Part Number:
CSD1632
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Supplier Device Package:
8-SON-EP (3x3)
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Technology:
MOSFET (Metal Oxide)
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Power Dissipation (Max):
3W (Ta)
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Gate Charge (Qg) (Max) @ Vgs:
8.4nC @ 4.5V
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Mounting Type:
Surface Mount
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Part Status:
Obsolete
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Vgs (Max):
+10V, -8V
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Series:
NexFET™
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Manufacturer:
Texas Instruments
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Drain to Source Voltage (Vdss):
25V
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Current - Continuous Drain (Id) @ 25°C:
21A (Ta), 60A (Tc)
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Vgs(th) (Max) @ Id:
1.4V @ 250µA
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Packaging:
Cut Tape (CT)
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Input Capacitance (Ciss) (Max) @ Vds:
1300pF @ 12.5V
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Operating Temperature:
-55°C ~ 150°C (TJ)
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detail:
N-Channel 25V 21A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-SON-EP (3x3)
