CSD16323Q3C
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| Manufacturer | Texas Instruments |
| Package | 8-PowerTDFN |
| Datasheet | CSD16323Q3C |
| Description | N-Channel 25V 21A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-SON-EP (3x3) |
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تغییرات قیمت
مشخصات
- FET Feature -
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 3V, 8V
- Package / Case 8-PowerTDFN
- Rds On (Max) @ Id, Vgs 4.5mOhm @ 24A, 8V
- Base Part Number CSD1632
- Supplier Device Package 8-SON-EP (3x3)
- Technology MOSFET (Metal Oxide)
- Power Dissipation (Max) 3W (Ta)
- Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
- Mounting Type Surface Mount
- Part Status Obsolete
- Vgs (Max) +10V, -8V
- Series NexFET™
- Manufacturer Texas Instruments
- Drain to Source Voltage (Vdss) 25V
- Current - Continuous Drain (Id) @ 25°C 21A (Ta), 60A (Tc)
- Vgs(th) (Max) @ Id 1.4V @ 250µA
- Packaging Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 12.5V
- Operating Temperature -55°C ~ 150°C (TJ)
- detail N-Channel 25V 21A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-SON-EP (3x3)
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