دیتاشیت PHD36N03LT,118
مشخصات دیتاشیت
| نام دیتاشیت |
PHD,PHP36N03LT
|
| حجم فایل |
94.228
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
13
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Obsolete
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FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
43.4A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
17mOhm @ 25A, 10V
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Vgs(th) (Max) @ Id:
2V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
18.5nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
690pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
57.6W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
DPAK
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Base Part Number:
PHD36
-
detail:
N-Channel 30V 43.4A (Tc) 57.6W (Tc) Surface Mount DPAK
