دیتاشیت SI2302DS,215

SI2302DS

مشخصات دیتاشیت

نام دیتاشیت SI2302DS
حجم فایل 365.584 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

دانلود دیتاشیت SI2302DS

SI2302DS Datasheet

مشخصات

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 650mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Tc)
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Base Part Number: SI2
  • detail: N-Channel 20V 2.5A (Tc) 830mW (Tc) Surface Mount TO-236AB (SOT23)

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