SI2302DS,215
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| Manufacturer | NXP USA Inc. |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Datasheet | SI2302DS |
| Description | N-Channel 20V 2.5A (Tc) 830mW (Tc) Surface Mount TO-236AB (SOT23) |
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مشخصات SI2302DS,215
- Manufacturer NXP USA Inc.
- Series TrenchMOS™
- Packaging Cut Tape (CT)
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs 85mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id 650mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
- Vgs (Max) ±8V
- Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V
- FET Feature -
- Power Dissipation (Max) 830mW (Tc)
- Operating Temperature -65°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package TO-236AB (SOT23)
- Package / Case TO-236-3, SC-59, SOT-23-3
- Base Part Number SI2
- detail N-Channel 20V 2.5A (Tc) 830mW (Tc) Surface Mount TO-236AB (SOT23)
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