دیتاشیت PHM18NQ15T,518
مشخصات دیتاشیت
نام دیتاشیت |
PHM18NQ15T
|
حجم فایل |
93.325
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
12
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
150V
-
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
-
Rds On (Max) @ Id, Vgs:
75mOhm @ 12A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
26.4nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
1150pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
62.5W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
8-HVSON (6x5)
-
Package / Case:
8-VDFN Exposed Pad
-
Base Part Number:
PHM18
-
detail:
N-Channel 150V 19A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (6x5)