دیتاشیت PBSS8110S,126
مشخصات دیتاشیت
| نام دیتاشیت |
PBSS8110S
|
| حجم فایل |
123.703
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
-
-
Packaging:
Tape & Box (TB)
-
Part Status:
Obsolete
-
Transistor Type:
NPN
-
Current - Collector (Ic) (Max):
1A
-
Voltage - Collector Emitter Breakdown (Max):
100V
-
Vce Saturation (Max) @ Ib, Ic:
200mV @ 100mA, 1A
-
Current - Collector Cutoff (Max):
100nA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 250mA, 10V
-
Power - Max:
830mW
-
Frequency - Transition:
100MHz
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
-
Supplier Device Package:
TO-92-3
-
Base Part Number:
PBSS8
-
detail:
Bipolar (BJT) Transistor NPN 100V 1A 100MHz 830mW Through Hole TO-92-3
