دیتاشیت PSMN4R6-100XS,127

PSMN4R6-100XS

مشخصات دیتاشیت

نام دیتاشیت PSMN4R6-100XS
حجم فایل 365.226 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

دانلود دیتاشیت PSMN4R6-100XS

PSMN4R6-100XS Datasheet

مشخصات

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 63.8W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Base Part Number: PSMN4
  • detail: N-Channel 100V 70.4A (Tc) 63.8W (Tc) Through Hole TO-220F

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