PSMN4R6-100XS,127
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| Manufacturer | NXP USA Inc. |
| Package | TO-220-3 Full Pack, Isolated Tab |
| Datasheet | PSMN4R6-100XS |
| Description | N-Channel 100V 70.4A (Tc) 63.8W (Tc) Through Hole TO-220F |
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مشخصات PSMN4R6-100XS,127
- Manufacturer NXP USA Inc.
- Series -
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 70.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 4.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 50V
- FET Feature -
- Power Dissipation (Max) 63.8W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220F
- Package / Case TO-220-3 Full Pack, Isolated Tab
- Base Part Number PSMN4
- detail N-Channel 100V 70.4A (Tc) 63.8W (Tc) Through Hole TO-220F
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