دیتاشیت HYG006N04LS1TA
مشخصات دیتاشیت
| نام دیتاشیت |
HYG006N04LS1TA
|
| حجم فایل |
64.762
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
HUAYI HYG006N04LS1TA
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
428W
-
Total Gate Charge (Qg@Vgs):
230nC@10V
-
Drain Source Voltage (Vdss):
40V
-
Input Capacitance (Ciss@Vds):
15400pF@25V
-
Continuous Drain Current (Id):
600A
-
Gate Threshold Voltage (Vgs(th)@Id):
1.8V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
115pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
0.45mΩ@10V,80A
-
Package:
TOLL
-
Manufacturer:
HUAYI
