FP25R12W1T7 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FP25R12W1T7
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حجم فایل
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65.365
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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14
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مشخصات فنی
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RoHS:
true
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Type:
IGBT Modules
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
Infineon Technologies FP25R12W1T7
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Operating Temperature:
-40°C~+175°C@(Tvjop)
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Collector Current (Ic):
25A
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Power Dissipation (Pd):
-
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Turn?on Delay Time (Td(on)):
37ns
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Input Capacitance (Cies@Vce):
4.77nF@25V
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Turn?on Switching Loss (Eon):
1.55mJ
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Diode Forward Voltage (Vf@If):
1.83V@25A
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Total Gate Charge (Qg@Ic,Vge):
-
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Turn?off Delay Time (Td(off)):
200ns
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Pulsed Collector Current (Icm):
50A
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Turn?off Switching Loss (Eoff):
2.1mJ
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Diode Reverse Recovery Time (Trr):
-
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Collector Cut-Off Current (Ices@Vce):
5.6uA@1.2kV
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Collector-Emitter Breakdown Voltage (Vces):
1.2kV
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.8V@500uA
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge):
1.6V@25A,15V
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Package:
AG-EASY1B-1
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Manufacturer:
Infineon Technologies
