FP25R12W1T7
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | FP25R12W1T7 |
| Description | --- |
sellers FP25R12W1T7
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تغییرات قیمت
مشخصات
- RoHS true
- Type IGBT Modules
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet Infineon Technologies FP25R12W1T7
- Operating Temperature -40°C~+175°C@(Tvjop)
- Collector Current (Ic) 25A
- Power Dissipation (Pd) -
- Turn?on Delay Time (Td(on)) 37ns
- Input Capacitance (Cies@Vce) 4.77nF@25V
- Turn?on Switching Loss (Eon) 1.55mJ
- Diode Forward Voltage (Vf@If) 1.83V@25A
- Total Gate Charge (Qg@Ic,Vge) -
- Turn?off Delay Time (Td(off)) 200ns
- Pulsed Collector Current (Icm) 50A
- Turn?off Switching Loss (Eoff) 2.1mJ
- Diode Reverse Recovery Time (Trr) -
- Collector Cut-Off Current (Ices@Vce) 5.6uA@1.2kV
- Collector-Emitter Breakdown Voltage (Vces) 1.2kV
- Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5.8V@500uA
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) 1.6V@25A,15V
- Package AG-EASY1B-1
- Manufacturer Infineon Technologies
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