دیتاشیت MMBT5551-7-F
مشخصات دیتاشیت
| نام دیتاشیت |
MMBT5551-7-F
|
| حجم فایل |
73.995
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Diodes Incorporated MMBT5551-7-F
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
600mA
-
Power Dissipation (Pd):
300mW
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Transition Frequency (fT):
300MHz
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DC Current Gain (hFE@Ic,Vce):
80@10mA,5V
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Collector Cut-Off Current (Icbo):
500nA
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Collector-Emitter Breakdown Voltage (Vceo):
160V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@50mA,5mA
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Package:
SOT-23
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Manufacturer:
Diodes Incorporated
