HYG082N03LR1C1 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
HYG082N03LR1C1
|
|
حجم فایل
|
67.658
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
9
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
HUAYI HYG082N03LR1C1
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
21.4W
-
Total Gate Charge (Qg@Vgs):
14.8nC@10V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
787pF@25V
-
Continuous Drain Current (Id):
32A
-
Gate Threshold Voltage (Vgs(th)@Id):
1.8V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
65pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
7mΩ@10V,10A
-
Package:
DFN-8(3x3)
-
Manufacturer:
HUAYI
