دیتاشیت BFN 19 H6327
مشخصات دیتاشیت
| نام دیتاشیت |
BFN 19 H6327
|
| حجم فایل |
70.04
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Infineon Technologies BFN 19 H6327
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Transistor Type:
-
-
Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
200mA
-
Power Dissipation (Pd):
1.5W
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Transition Frequency (fT):
100MHz
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DC Current Gain (hFE@Ic,Vce):
25@1mA,10V
-
Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
300V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@20mA,2mA
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Package:
SOT-89-4
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Manufacturer:
Infineon Technologies
