HYG200P10LR1P دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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HYG200P10LR1P
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حجم فایل
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66.526
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
HUAYI HYG200P10LR1P
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Operating Temperature:
+175°C@(Tj)
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Power Dissipation (Pd):
214W
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Total Gate Charge (Qg@Vgs):
83nC@10V
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
11.52nF@50V
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Continuous Drain Current (Id):
80A
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Gate Threshold Voltage (Vgs(th)@Id):
1.8V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
91pF@50V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
20mΩ@10V,40A
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Package:
TO-220
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Manufacturer:
HUAYI
