دیتاشیت NJVMJD45H11T4G
مشخصات دیتاشیت
| نام دیتاشیت |
NJVMJD45H11T4G
|
| حجم فایل |
92.149
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi NJVMJD45H11T4G
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Transistor Type:
PNP
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
8A
-
Power Dissipation (Pd):
1.75W
-
Transition Frequency (fT):
90MHz
-
DC Current Gain (hFE@Ic,Vce):
60@2A,1V
-
Collector Cut-Off Current (Icbo):
1uA
-
Collector-Emitter Breakdown Voltage (Vceo):
80V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1V@400mA,8A
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Package:
TO-252
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Manufacturer:
onsemi
