2N5551TF دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
2N5551TF
|
|
حجم فایل
|
52.723
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
9
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi 2N5551TF
-
Transistor Type:
NPN
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Collector Current (Ic):
600mA
-
Power Dissipation (Pd):
625mW
-
Transition Frequency (fT):
100MHz
-
DC Current Gain (hFE@Ic,Vce):
80@10mA,5V
-
Collector Cut-Off Current (Icbo):
50nA
-
Collector-Emitter Breakdown Voltage (Vceo):
160V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@50mA,5mA
-
Package:
TO-92-3
-
Manufacturer:
onsemi
