MJD112G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MJD112G
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حجم فایل
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59.783
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
onsemi MJD112RLG
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
2A
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Power Dissipation (Pd):
1.75W
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Transition frequency (fT):
25MHz
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DC current gain (hFE@Vce,Ic):
1000@3V,2A
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Collector-emitter voltage (Vceo):
100V
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Collector cut-off current (Icbo@Vcb):
20uA
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Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
3V@4A,40mA
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Package:
TO-252
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Manufacturer:
onsemi
