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PMV213SN-VB Datasheet
Datasheet specifications
| Datasheet's name | PMV213SN-VB |
|---|---|
| File size | 72.127 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet PMV213SN-VB |
Download Datasheet |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec PMV213SN-VB
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 2.5W
- Total Gate Charge (Qg@Vgs): 2.9nC@4.5V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 190pF@50V
- Continuous Drain Current (Id): 2A
- Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 13pF@50V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 240mΩ@10V,1.5A
- Package: SOT-23-3
- Manufacturer: VBsemi Elec