PMV213SN-VB
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| Manufacturer | VBsemi Elec |
| Package | --- |
| Datasheet | PMV213SN-VB |
| Description | --- |
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Specifications PMV213SN-VB
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet VBsemi Elec PMV213SN-VB
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W
- Total Gate Charge (Qg@Vgs) 2.9nC@4.5V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 190pF@50V
- Continuous Drain Current (Id) 2A
- Gate Threshold Voltage (Vgs(th)@Id) 2.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 13pF@50V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 240mΩ@10V,1.5A
- Package SOT-23-3
- Manufacturer VBsemi Elec
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