IPB031NE7N3 G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
IPB031NE7N3 G
|
|
حجم فایل
|
57.764
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
9
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Infineon Technologies IPB031NE7N3 G
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
214W
-
Total Gate Charge (Qg@Vgs):
117nC@10V
-
Drain Source Voltage (Vdss):
75V
-
Input Capacitance (Ciss@Vds):
8130pF@37.5V
-
Continuous Drain Current (Id):
100A
-
Gate Threshold Voltage (Vgs(th)@Id):
3.8V@155uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
3.1mΩ@100A,10V
-
Package:
TO-263
-
Manufacturer:
Infineon Technologies
