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VN10KN3-G-P013 Datasheet
Datasheet specifications
| Datasheet's name | VN10KN3-G-P002 |
|---|---|
| File size | 60.253 KB |
| File type | |
| Number of pages | 14 |
Download Datasheet VN10KN3-G-P002 |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Microchip Tech VN10KN3-G-P013
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 1W
- Input Capacitance (Ciss@Vds): 60pF@25V
- Continuous Drain Current (Id): 310mA
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@500mA,10V
- Package: TO-92-3
- Manufacturer: Microchip Tech
