دیتاشیت HN1B04FE-GR,LF
مشخصات دیتاشیت
| نام دیتاشیت |
HN1B04FE-GR,LF
|
| حجم فایل |
87.767
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
TOSHIBA HN1B04FE-GR,LF
-
Transistor Type:
1PCSNPN&1PCSPNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
150mA
-
Power Dissipation (Pd):
100mW
-
Transition Frequency (fT):
80MHz
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DC Current Gain (hFE@Ic,Vce):
200@2mA,6V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
50V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
100mV@100mA,10mA
-
Package:
SOT-666-6
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Manufacturer:
TOSHIBA
