HN1B04FE-GR,LF
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| Manufacturer | TOSHIBA |
| Package | --- |
| Datasheet | HN1B04FE-GR,LF |
| Description | --- |
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Specifications HN1B04FE-GR,LF
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet TOSHIBA HN1B04FE-GR,LF
- Transistor Type 1PCSNPN&1PCSPNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 150mA
- Power Dissipation (Pd) 100mW
- Transition Frequency (fT) 80MHz
- DC Current Gain (hFE@Ic,Vce) 200@2mA,6V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 100mV@100mA,10mA
- Package SOT-666-6
- Manufacturer TOSHIBA
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