دیتاشیت IRG7PH35UD-EP
مشخصات دیتاشیت
| نام دیتاشیت |
IRG7PH35UD-EP
|
| حجم فایل |
100.745
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
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Type:
Trench
-
Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
Infineon Technologies IRG7PH35UD-EP
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Operating Temperature:
55°C~+150°C@(Tj)
-
Collector Current (Ic):
50A
-
Power Dissipation (Pd):
180W
-
Turn?on Delay Time (Td(on)):
30ns
-
Turn?on Switching Loss (Eon):
1.06mJ
-
Total Gate Charge (Qg@Ic,Vge):
85nC
-
Turn?off Delay Time (Td(off)):
160ns
-
Pulsed Collector Current (Icm):
60A
-
Diode Reverse Recovery Time (Trr):
105ns
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Collector-Emitter Breakdown Voltage (Vces):
1200V
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.2V@15V,20A
-
Package:
TO-247-3
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Manufacturer:
Infineon Technologies
