دیتاشیت CSD19531Q5AT
مشخصات دیتاشیت
| نام دیتاشیت |
CSD19531Q5AT
|
| حجم فایل |
86.947
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
18
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Texas Instruments CSD19531Q5AT
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Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
3.3W;125W
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Total Gate Charge (Qg@Vgs):
48nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
3870pF@50V
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Continuous Drain Current (Id):
100A
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Gate Threshold Voltage (Vgs(th)@Id):
3.3V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
6.4mΩ@16A,10V
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Package:
VSONP-8
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Manufacturer:
Texas Instruments
