دیتاشیت CSD19531Q5AT ماسفت کانال N

مشخصات دیتاشیت

دانلود دیتاشیت CSD19531Q5A Datasheet	CSD19531Q5A Datasheet Datasheet

Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 100V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V
Vgs (Max): ±20V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Technology: MOSFET (Metal Oxide)
Manufacturer: Texas Instruments
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Feature: -
Input Capacitance (Ciss) (Max) @ Vds: 3870pF @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Part Status: Active
Series: NexFET™
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Supplier Device Package: 8-VSONP (5x6)
Mounting Type: Surface Mount
Base Part Number: CSD19531
detail: N-Channel 100V 100A (Ta) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)