دیتاشیت MMBT5551LT1G

مشخصات دیتاشیت

دانلود دیتاشیت MMBT5550L-51L, SMMBT5551L	MMBT5550L-51L, SMMBT5551L Datasheet

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MMBT5551LT1G
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 600mA
Power Dissipation (Pd): 225mW
DC Current Gain (hFE@Ic,Vce): 80@10mA,5V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 160V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@5mA,50mA
Package: SOT-23(TO-236)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 225mW
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT5551
detail: Bipolar (BJT) Transistor NPN 160V 600mA 225mW Surface Mount SOT-23-3 (TO-236)